It is the heaviest non-radioactive element in the periodic table and is the least toxic compared to other nearby heavy metal elements and is considered a â€œgreenâ€ element. Telluride semiconductor materials include rare germanium materials formed by incorporation of a small amount of germanium atoms in III-V compound semiconductors, conventional thermoelectric materials such as Bi2Te3 and Bi2Se3, and new topological insulator materials, and germanium-containing oxide materials represented by BiFeO3, etc., with many novelties. Its physical properties are expected to replace toxic heavy metal elements such as Cd, Pb, Sb, and Hg, and become a new generation of sustainable semiconductor functional materials in the fields of information, energy, and medicine. In recent years, it has received extensive international attention. Since 2010, every year. Held an international conference on materials, materials and devices.
The team led by Wang Yimin, a researcher at the State Key Laboratory of Information Functional Materials at the Shanghai Institute of Microsystems and Information Technology, Chinese Academy of Sciences, in collaboration with Chalmers University of Technology, Sweden, has achieved a potential for epitaxial growth of dilute compound materials and Bi2Te3 materials. In the series, the GaSbBi single crystal was first grown in the world by molecular beam epitaxy (Molecular Beam Epitaxy, MBE), and the 1.3 Î¼m room temperature luminescence of the InGaAsBi quantum well on the GaAs substrate was realized. The room temperature mobility of the Bi2Te3 film was 700 cm 2 /Vs and 4.2. K world record of low temperature mobility of 7000cm2/Vs; self-adopted key laboratory gas molecular beam epitaxy system V90 for the first time in the world to grow high quality InPBi, InGaPBi and InAlPBi thin film single crystal, 430 nm InPBi film X double crystal diffraction rocking curve half The peak width is only 42arcsec, and the highest germanium atom concentration is more than 4%. The singular wide-spectral luminescence phenomenon in InPBi is found, and some results have been accepted by ScientificReports. In 1988, Berding et al. predicted the analysis of three potential new infrared materials, InPBi, InAsBi and InSbBi. The latter two materials have been reported, and the dilute phosphide crystals are synthesized for the first time.
The research on the semiconductor materials of Shanghai Microsystems has received international attention. The team of Wang Yimin was invited to write the first chapter of BismuthContainingCompounds, the world's first semiconductor semiconductor published by Springer Press, Germany. On behalf of the 18th International Molecular Beam Epitaxy Conference, the 5th International Conference on Telluride Semiconductor Materials and the 17th International Conference on Transparent Optical Networks, the Institute received 7 invitations to the conference. At present, the team has applied to join the EU's seventh framework science and technology collaboration platform COSTActionMP1204, as a member of non-EU member states, providing sample materials for more than 10 research groups in Germany, the Netherlands, Sweden, Finland, Poland and other countries, and proposed to bid for 2016. The 7th International Conference on Telluride Semiconductor Materials was held in Shanghai.
As the chief unit, the Wang Yimin team is currently undertaking the â€œ973â€ project â€œBasic Research on 2.8-4.0 Micron Room Temperature High Performance Semiconductor Laser Materials and Device Fabricationâ€ and the Natural Science Fund Key Project â€œResearch on New Thin Semiconductor Materials Applied to Uncooled Lasersâ€ It mainly studies new thin materials and their applications in communication bands and mid-infrared lasers.
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