Thin-film transistors (TFTs) are an important type of semiconductor device and have a wide range of applications in the fields of transparent and flexible electronic devices and portable electronic device applications. Conventional oxide TFTs generally employ a top-gate structure or a bottom-gate structure, and the electrostatic regulation of the channel electrode's conductivity to the channel is achieved by means of vertical coupling.
At the same time, the device usually uses SiO2 or high-dielectric-constant oxide as the gate dielectric, which is limited by the dielectric constant of the gate dielectric, and the working voltage of the thin-film transistor is usually higher than 5V. In recent years, a class of transistors using ionic liquid electrolyte as a gate dielectric has been proposed. Under the action of an external electric field, ions in the ionic liquid electrolyte will aggregate at the ionic liquid/electrode interface to form an interface double layer, which is extremely strong. Interface double layer effect, the working voltage of this type of transistor is usually <2V.
Recently, researchers at the Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, combined the unique ion/electron interface dual-layer coupling characteristics of the all-solid-state ionic liquid electrolyte to fabricate an oxide thin-film transistor with a laterally-coupled structure, in which the gate electrode conducts electricity to the channel. The regulation of characteristics is achieved through lateral coupling. Tests have shown that the laterally coupled double layer capacitance is up to ~2μF/cm2.
Transistor performance was tested and it was found that the device has a switching ratio of up to 106 at 1.5V operating voltage, an electron mobility of 24cm2/Vs, and a subthreshold slope of only ~90mV/dec. Connect the device to a resistor with appropriate resistance to obtain a resistor-loaded inverter. The voltage gain of the inverter at Vdd=1V is as high as ~8. At the same time, the transient response characteristics of the device were analyzed and the characteristic time constant of proton relaxation was obtained. This transistor has potential application value in the field of low power consumption and portable devices. The related results were published in ACS Applied Materials & Interface (2015), Applied Physics Letters 105 (2014) 243508 and others.
The above research work has been funded by projects such as the "973" project (2012CB933004), the National Natural Science Foundation of China (11474293), the Natural Science Foundation of Zhejiang Province (LY14A040009), and the Ningbo Natural Science Foundation (2014A610145).
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